- Top Star Metal Materials Co.,Ltd
Titanium Sputtering Target
99.9% Purity Titanium Target
3N5,4N,4N5 Ti Target
Titanium sputtering target refers to titanium metal target materials used in the sputtering coating process of physical vapor deposition (PVD) technology. They are widely applied in high-tech fields such as semiconductors, optical coating, solar cells, flat panel displays, and hard coatings.
1.High ductility and fracture resistance
Titanium target materials can be processed into complex shapes (such as tubular or flat targets) through plastic deformation, and during sputtering, they can withstand high stress (such as the target edge bearing a pressure of 1 ton) without breaking.High density and low porosity: Density ≥ 3.11 – 4.00 g/cm³ (close to theoretical density), porosity less than 2%, reducing particle splashing and impurity contamination during sputtering.
2. Material purity and microstructure
Ultra-high purity: The purity is usually greater than 99.95%. Semiconductor-grade targets require a purity of 4N5 (99.995%) to 6N (99.9999%), significantly reducing the impact of alkali metals/ radioactive impurities on the electrical properties of the film.
Uniform fine-grained structure: The grain size is controlled within 50 – 100 μm. Through powder metallurgy technology, component homogeneity (such as titanium distribution deviation ±0.5%) is achieved, ensuring stable sputtering rate and consistency in film thickness.
3. Process Compatibility
The magnetron sputtering and arc evaporation processes are compatible with PVD (Physical Vapor Deposition) equipment and can meet the requirements for various functional films such as conductive films, insulating films, and ultra-hard films.
• Excellent chemical stability, not prone to reaction under high vacuum and high temperature conditions;
• Strong adhesion of the film layer, facilitating the formation of uniform and dense coatings on various substrates;
• Moderate electrical conductivity and thermal conductivity;
• Capable of achieving precise control over film thickness and composition adjustment.
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